Calculate semiconductor dopant profiles and sheet resistance using Gaussian or ERFC models. Switch between Forward and Reverse modes depending on your known parameters.
Enter process conditions to calculate profile parameters (Gaussian profile)
One-sided Gaussian profile for drive-in diffusion or ion implant
Toggle to enter surface and background concentrations
Maximum dopant concentration at the surface
Choose Dt for drive-in profiles or deltaRp for implant profiles
Diffusion coefficient times time
Grid spacing for numerical integration